K815P/ k825p/ k845p vishay semiconductors 1 (9) www.vishay.com document number 83524 rev. a4, 30mar01 optocoupler with photodarlington output description the K815P/ k825p/ k845p consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. applications programmable logic controllers, modems, answering machines, general applications features endstackable to 2.54 mm (0.1') spacing isolation test voltage v io = 5 kv rms low coupling capacitance of typical 0.3 pf low temperature coefficient of ctr wide ambient temperature range u nderwriters l aboratory (ul) 1577 recognized, file number e-76222 csa (c-ul) 1577 recognized, file number e- 76222 - double protection coupling system u 14925 coll. emitter anode cath. 4 pin 8 pin 16 pin 14580 c order instruction ordering code ctr ranking remarks K815P > 600% 4 pin = single channel k825p > 600% 8 pin = dual channel k845p > 600% 16 pin = quad channel
K815P/ k825p/ k845p vishay semiconductors www.vishay.com 2 (9) rev. a4, 30mar01 document number 83524 absolute maximum ratings input (emitter) parameter test conditions symbol value unit reverse voltage v r 6 v forward current i f 60 ma forward surge current t p ? s i fsm 1.5 a power dissipation t amb ? c p v 100 mw junction temperature t j 125 c output (detector) parameter test conditions symbol value unit collector emitter voltage v ceo 35 v emitter collector voltage v eco 7 v collector current i c 80 ma peak collector current t p /t = 0.5, t p ? ? ? ?? ? ? ???? ?????????? ? ?? ? c p v 150 mw junction temperature t j 125 c coupler parameter test conditions symbol value unit ac isolation test voltage (rms) t = 1 min, f = 50 hz v io 1) 5 kv total power dissipation t amb ? c p tot 250 mw operating ambient temperature range t amb 40 to +100 c storage temperature range t stg 55 to +125 c soldering temperature 2 mm from case, t ? ? ? ?? ?M c 1) related to standard climate 23/50 din 50014
K815P/ k825p/ k845p vishay semiconductors 3 (9) www.vishay.com document number 83524 rev. a4, 30mar01 electrical characteristics (t amb = 25 ?? ???? ???????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ??????? ??????? ? ? ? ? ? ? ?? ?? ? ?????? ?????? ? M ? ? ? a output (detector) parameter test conditions symbol min. typ. max. unit collector emitter voltage i c = 100 a v ceo 35 v emitter collector voltage i e = 100 a v eco 7 v collector dark current v ce = 10 v, i f = 0, e = 0 i ceo 100 na coupler parameter test conditions symbol min. typ. max. unit collector emitter saturation voltage i f = 20 ma, i c = 5 ma v cesat 0.1 v cut-off frequency i f = 10 ma, v ce = 5 v, r l = 100 f c 10 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio (ctr) parameter test conditions type symbol min. typ. max. unit i c /i f v ce = 2 v, i f = 1 ma K815P, k825p, k845p ctr 6.0 8.0
K815P/ k825p/ k845p vishay semiconductors www.vishay.com 4 (9) rev. a4, 30mar01 document number 83524 switching characteristics parameter test conditions symbol typ. unit rise time v ce = 2 v, i c = 10 ma, r l = 100 (see figure 1) t r 300 s turn-off time ce c l (g) t off 250 s r l 50 w channel ii channel i i c = 10 ma; +v cc i f i f 0 r g = 50 w t p t p = 50 s t = 0.01 oscilloscope r i = 1 m w c i = 20 pf 14779 figure 1. test circuit, non-saturated operation t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 2. switching times
K815P/ k825p/ k845p vishay semiconductors 5 (9) www.vishay.com document number 83524 rev. a4, 30mar01 typical characteristics (t amb = 25 c, unless otherwise specified) 0.8 0.9 1.0 1.1 1.2 1.3 0 20406080100 t amb ambient temperature ( 5 c ) 14389 v forward voltage ( v ) f i f =10ma figure 3. forward voltage vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 14390 f i forward current ( ma ) figure 4. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 302010 0 10 20 30 40 50 60 70 80 90 100 t amb ambient temperature ( 5 c ) 14391 ctr relative current transfer ratio rel v ce =5v i f =1ma figure 5. relative current transfer ratio vs. ambient temperature 1 10 100 1000 10000 100000 20 30 40 50 60 70 80 90 100 t amb ambient temperature ( 5 c ) 14392 i collector dark current, ceo with open base ( na ) v ce =10v i f =0 figure 6. collector dark current vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0.1 1.0 10.0 100.0 i f forward current ( ma ) 14393 v ce =2v i collector current ( ma ) c figure 7. collector current vs. forward current 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 v ce collector emitter voltage ( v ) 14394 i collector current ( ma ) c 1ma 0.5ma 0.2ma 0.1ma i f =2ma figure 8. collector current vs. collector emitter voltage
K815P/ k825p/ k845p vishay semiconductors www.vishay.com 6 (9) rev. a4, 30mar01 document number 83524 0.6 0.7 0.8 0.9 1.0 1.1 1 10 100 i c collector current ( ma ) 14395 v collector emitter saturation voltage ( v ) cesat ctr=200% 25% 50% 100% figure 9. collector emitter saturation voltage vs. collector current 10 100 1000 10000 0.1 1.0 10.0 100.0 i f forward current ( ma ) 14396 v ce =2v ctr current transfer ratio ( % ) figure 10. current transfer ratio vs. forward current K815P 820utk63 type date code coupling system indicator company logo production location 15085 pin 1 indication (ym) figure 11. marking example
K815P/ k825p/ k845p vishay semiconductors 7 (9) www.vishay.com document number 83524 rev. a4, 30mar01 dimensions of K815P in mm 14789 dimensions of k825p in mm 14784
K815P/ k825p/ k845p vishay semiconductors www.vishay.com 8 (9) rev. a4, 30mar01 document number 83524 dimensions of k845p in mm 14783
K815P/ k825p/ k845p vishay semiconductors 9 (9) www.vishay.com document number 83524 rev. a4, 30mar01 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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